*THE ENCHANTING PROPERTIES OF OXYGEN ATOMS IN SILICON
- Author(s):
- Publication title:
- Defects in materials : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 209
- Pub. Year:
- 1991
- Page(from):
- 103
- Page(to):
- 118
- Pages:
- 16
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991019 [1558991018]
- Language:
- English
- Call no.:
- M23500/209
- Type:
- Conference Proceedings
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