HIGH PERFORMANCE 0.5 AND 0.25 μm GATE GaAs MESFET GROWN BY MOCVD USING TERTIARYBUTYLARSINE
- Author(s):
Sundaram, V.S. Mao, B.-Y. Zurek, S.J. Levy, H.M. Lee, G.Y. Fraas, L.M. - Publication title:
- Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 204
- Pub. Year:
- 1991
- Page(from):
- 123
- Page(to):
- 128
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990968 [1558990968]
- Language:
- English
- Call no.:
- M23500/204
- Type:
- Conference Proceedings
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