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IN-SITU FTIR AND MASS SPECTROMETRIC STUDIES OF GALLIUM ARSENIDE METALORGANIC CHEMICAL VAPOR DEPOSITION: TRIMETHYL GALLIUM AND TERTIARY-BUTYL ARSINE ON GaAs(100)

Author(s):
Publication title:
Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
204
Pub. Year:
1991
Page(from):
53
Page(to):
58
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990968 [1558990968]
Language:
English
Call no.:
M23500/204
Type:
Conference Proceedings

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