CHARACTERISTICS OF 56 MeV OXYGEN IMPLANTATION INTO Si AND III-V SEMICONDUCTORS

CHARACTERISTICS OF 56 MeV OXYGEN IMPLANTATION INTO Si AND III-V SEMICONDUCTORS

Author(s):

Pearton, S.J.

Publication title:

Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

201

Pub. Year:

1991

Page(from):

271

Page(to):

276

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990074 [1558990070]

Language:

English

Call no.:

M23500/201

Type:

Conference Proceedings

Details

TDL ID:	ZA00015685
Series ID:	PA00000011
Conf. info. (Name):	Symposium on surface chemistry and beam-solid interactions
Conf. info. (Number):	1990
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1990.11.26-1990.11.29

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