RAPID THERMAL PROCESSING OF BURIED Si1-XGeX STRAINED LAYERS: PHOTOLUMINESCENCE DECAY AND MISFIT DISLOCATION GENERATION

RAPID THERMAL PROCESSING OF BURIED Si1-XGeX STRAINED LAYERS: PHOTOLUMINESCENCE DECAY AND MISFIT DISLOCATION GENERATION

Author(s):: Houghton, D. C.
Publication title:: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.
Title of ser.:: Materials Research Society symposium proceedings
Ser. no.:: 198
Pub. Year:: 1990
Page(from):: 509
Page(to):: 514
Pages:: 6
Pub. info.:: Pittsburgh, Pa.: Materials Research Society
ISSN:: 02729172
ISBN:: 9781558990876 [1558990879]
Language:: English
Call no.:: M23500/198
Type:: Conference Proceedings

Details

TDL ID:	ZA00015682
Series ID:	PA00000011
Conf. info. (Name):	Symposium on epitaxial heterostructures
Conf. info. (Number):	1990
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1990.04.16-1990.04.19

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