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GaAs HETEROEPITAXY ON SUBSTRATE-ENGINEERED SILICON USING SiXGe1-X MULTILAYER STRUCTURE

Author(s):
Posthill, J. B.
Venkatasubramanian, R.
Malta, D. P.
Hattangady, S. V.
Fountain, G. G.
Timmons,. M. L.
Markunas, R. J.
2 more
Publication title:
Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
198
Pub. Year:
1990
Page(from):
219
Page(to):
224
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990876 [1558990879]
Language:
English
Call no.:
M23500/198
Type:
Conference Proceedings

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