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CHARACTERISTICS OF MOCVD-GROWN A1GaAs/GaAs SQW LASERS AND GaAs MESFETs FABRICATION ON Si SUBSTRATE WITH SiO2-BACK COATING

Author(s):
Egawa, Takashi
Tada, Hitoshi
Kobayashi, Yasufumi
Nozaki, Shinji
Soga, Tetsuo
Jimbo, Takashi
Umeno, Masayoshi
2 more
Publication title:
Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
198
Pub. Year:
1990
Page(from):
141
Page(to):
146
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990876 [1558990879]
Language:
English
Call no.:
M23500/198
Type:
Conference Proceedings

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