CALCULATED PROPERTIES OF CARBON DEFECTS IN SILICON

CALCULATED PROPERTIES OF CARBON DEFECTS IN SILICON

Author(s):: Tersoff, J.
Publication title:: Atomic scale calculations of structure in materials : symposium held April 16-17, 1990, San Francisco, California, U.S.A.
Title of ser.:: Materials Research Society symposium proceedings
Ser. no.:: 193
Pub. Year:: 1990
Page(from):: 167
Page(to):: 170
Pages:: 4
Pub. info.:: Pittsburgh, Pa.: Materials Research Society
ISSN:: 02729172
ISBN:: 9781558990821 [1558990828]
Language:: English
Call no.:: M23500/193
Type:: Conference Proceedings

Details

TDL ID:	ZA00015677
Series ID:	PA00000011
Conf. info. (Name):	Symposium on atomic scale calculations of structure in materials
Conf. info. (Number):	1990
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1990.04.16-1990.04.17

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