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RELIABILITY OF OHMIC CONTACTS FOR AlGaAs/GaAs HBTs

Author(s):
Jackson, G. S.
Tong, E.
Saledas, P.
Kazior, T. E.
Sprague, R.
Brooks, R. C.
Hsieh, K. C.
2 more
Publication title:
Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
184
Pub. date:
1990
Page(from):
225
Page(to):
230
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990739 [1558990739]
Language:
English
Call no.:
M23500/184
Type:
Conference Proceedings

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