ORIGIN AND BEHAVIOR OF MAIN ELECTRON TRAPS IN Si- IMPLANTED GaAs
- Author(s):
- Publication title:
- Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 184
- Pub. Year:
- 1990
- Page(from):
- 93
- Page(to):
- 100
- Pages:
- 8
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990739 [1558990739]
- Language:
- English
- Call no.:
- M23500/184
- Type:
- Conference Proceedings
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