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*PROPERTIES OF DX CENTERS IN AlxGa1-x As AND EFFECTS ON HETEROJUNCTION DEVICES

Author(s):
Mooney, P. M.  
Publication title:
Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
184
Pub. Year:
1990
Page(from):
39
Page(to):
48
Pages:
10
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990739 [1558990739]
Language:
English
Call no.:
M23500/184
Type:
Conference Proceedings

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