IN-SITU DOPED POLYCRYSTALLINE SILICON DEPOSITED BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION USING TERTIARYBUTYLPHOSPHINE

IN-SITU DOPED POLYCRYSTALLINE SILICON DEPOSITED BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION USING TERTIARYBUTYLPHOSPHINE

Author(s):

Publication title:

Polysilicon thin films and interfaces

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

182

Pub. Year:

1990

Page(from):

15

Page(to):

20

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990715 [1558990712]

Language:

English

Call no.:

M23500/182

Type:

Conference Proceedings

Details

TDL ID:	ZA00015666
Series ID:	PA00000011
Conf. info. (Name):	Polysilicon Thin Films and Interfaces : Symposium
Conf. info. (Number):	1990
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1990.04.17-1990.04.19

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