REACTIVE ION BEAM ASSISTED EVAPORATION OF TIN FILMS FOR USE AS DIFFUSION BARRIERS IN GaAs MMICs

REACTIVE ION BEAM ASSISTED EVAPORATION OF TIN FILMS FOR USE AS DIFFUSION BARRIERS IN GaAs MMICs

Author(s):

Publication title:

Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

181

Pub. Year:

1990

Page(from):

511

Page(to):

516

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990708 [1558990704]

Language:

English

Call no.:

M23500/181

Type:

Conference Proceedings

Details

TDL ID:	ZA00015665
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced metallizations in microelectronics
Conf. info. (Number):	1990
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1990.04.16-1990.04.20

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