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In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS

Author(s):
Ren, F.
Pearton, S. J.
Hobson, W. S.
Fullowan, T. R.
Emerson, A. B.
Yanof, A. W.
Schleich, D. M.
2 more
Publication title:
Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
181
Pub. date:
1990
Page(from):
481
Page(to):
486
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990708 [1558990704]
Language:
English
Call no.:
M23500/181
Type:
Conference Proceedings

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