ATOMIC LAYER EPITAXY OF GaAs ON Ge SUBSTRATES

ATOMIC LAYER EPITAXY OF GaAs ON Ge SUBSTRATES

Author(s):

Publication title:

Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

163

Pub. Year:

1990

Page(from):

647

Page(to):

652

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990517 [1558990518]

Language:

English

Call no.:

M23500/163

Type:

Conference Proceedings

Details

TDL ID:	ZA00015647
Series ID:	PA00000011
Conf. info. (Name):	Symposium on impurities, defects, and diffusion in semiconductors
Conf. info. (Number):	1989
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1989.11.27-1989.12.01

Similar Items:

1 Conference Proceedings PHOTOREFLECTANCE OF A GaAs/In0.5Ga0.5P(ORDERED) SINGLE QUANTUM WELL GROWN BY ATOMIC LAYER EPITAXY Yin, X., Pollak, Fred H., McDermott, B.T., Reid, K.G., Bedair, S.M. Materials Research Society	7 Conference Proceedings New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy Piner, E. L., He, Y. W., Boutros, K. S., McIntosh, F. G., Roberts, J. C., Bedair, S. M., El-Masry, N. A. MRS - Materials Research Society
2 Conference Proceedings ORDERED TERNARY ALLOYS BY ATOMIC LAYER EPITAXY McDermott, B.T., Reid, K.G., Dip, A., El-Masry, N.A., Bedar, S.M., Duncan, W., Yin, X., Pollak, F.H. Materials Research Society	8 Conference Proceedings DEFECT REDUCTION IN GaAs EPILAYERS ON Si SUBSTRATES USING STRAINED LAYER SUPERLATTICES El-Masry, N., Hamaguchi, N., Tarn, J. C. L., Karam,. N., Humphreys, T. P., Moore, D., Bedair, S. M., Lee, J. W., … Materials Research Society
3 Conference Proceedings LASER SELECTIVE AREA EPITAXY FOR THE POTENTIAL OF OPTOELECTRONIC INTEGRATION Liu, H., Roberts, J.C., Ramdani, J., Bedair, S.M. Materials Research Society	9 Conference Proceedings Low-Temperature Growth of High Quality InxGa1-xN by Atomic Layer Epitaxy Boutros, K. S., Roberts, J. C., McIntosh, F. G., Piner, E. L., El-Masry, N. A., Bedair, S. M. MRS - Materials Research Society
4 Conference Proceedings *RECENT PROGRESS IN ATOMIC LAYER EPITAXY OF III-V COMPOUNDS Bedair, S. M. Materials Research Society	10 Conference Proceedings MICROSTRUCTURE OF THIN LAYERS OF MBE-GROWTH GaAS ON Si SUBSTRATES Rosner, S.J., Koch, S.M., Lederman, S., Harris, J.Jr. S. Materials Research Society
5 Conference Proceedings MULTI-WAFER ATOMIC LAYER EPITAXY REACTOR FOR DEVICE QUALITY GaAs Colter, P. C., Hussein, S. A., Dip, A., Erdogan, M. U., Bedair, S. M. Materials Research Society	11 Conference Proceedings Selective Area Epitaxy of GaAs Optical Waveguides by Laser Assisted Chemical Vapor Deposition Roberts, J. C., Boutros, K. S., Bedair, S. M. MRS - Materials Research Society
6 Conference Proceedings ATOMIC LAYER EPITAXY OG GaAs ON Si BY MOCVD Karam, N. H., Haven, V. E., Vermon,. S. M., Tan, J. C., El-Masry, N. A. Materials Research Society	12 Conference Proceedings *ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES Ponce, F. A., Anderson, G. B., Ballingall, J. M. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12