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ANNEALING OF ION IMPLANTED TIN IN SILICON: A RBS/CHANNELING, MOSSBAUER SPECTROSCOPY AND TEM INVESTGAGION OF SOLUBILITY AND RESIDUAL DEFECTS

Author(s):
Publication title:
Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
163
Pub. Year:
1990
Page(from):
585
Page(to):
590
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990517 [1558990518]
Language:
English
Call no.:
M23500/163
Type:
Conference Proceedings

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