GROWTH OF EPITAXIAL SiC LAYERS ONTO ON- AND OFF-AXIS 6H-SiC SUBSTRATES BY ION BEAM DEPOSITION

GROWTH OF EPITAXIAL SiC LAYERS ONTO ON- AND OFF-AXIS 6H-SiC SUBSTRATES BY ION BEAM DEPOSITION

Author(s):

Publication title:

Diamond, silicon carbide, and related wide bandgap semiconductors : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

162

Pub. Year:

1990

Page(from):

451

Page(to):

456

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990500 [155899050X]

Language:

English

Call no.:

M23500/162

Type:

Conference Proceedings

Details

TDL ID:	ZA00015646
Series ID:	PA00000011
Conf. info. (Name):	Symposium on diamond, silicon carbide, and related wide bandgap semiconductors
Conf. info. (Number):	1989
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1989.11.27-1989.12.01

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