SELECTIVE AREA GROWTH OF GaAs ON Si BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-EXCITED MOLECULAR-BEAM-EPITAXY (ECR-MBE)

SELECTIVE AREA GROWTH OF GaAs ON Si BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-EXCITED MOLECULAR-BEAM-EPITAXY (ECR-MBE)

Author(s):

Publication title:

Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

160

Pub. Year:

1990

Page(from):

487

Page(to):

492

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990487 [1558990488]

Language:

English

Call no.:

M23500/160

Type:

Conference Proceedings

Details

TDL ID:	ZA00015644
Series ID:	PA00000011
Conf. info. (Name):	Symposium on layered structures
Conf. info. (Number):	1989
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1989.11.27-1989.12.01

Similar Items:

1 Conference Proceedings *GaAs EPITAXIAL GROWTH BY ECR-MBE Kondo, Naoto, Nanishi, Yashushi, Shibata, Tomohiro, Yamamoto, Norio, Fujimoto, Masatomo Materials Research Society	7 Conference Proceedings Molecular Beam Epitaxy and Selective MBE Depostion of GaAs Device Structures Christou A. Martinus Nijhoff Publishers
2 Conference Proceedings Effects of ECR-Plasma Excitation in GaAs MBE Growth Shibata,T., Yamamoto,N., Kondo,N., Nanishi,Y., Fujimoto,M. Trans Tech Publications	8 Conference Proceedings Oxide Film Formation From Electron Cyclotron Resonance (ECR) Plasmas Barbour, J.C., Apblett, C.A., Denison, D.R., Sullivan, J.P. Electrochemical Society
3 Conference Proceedings Bandgap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy Nanishi, Yasushi, Saito, Yoshiki, Yamaguchi, Tomohiro, Matsuda, Fumie, Araki, Tsutomu, Naoi, Hiroyuki, Suzuki, Akira, … Materials Research Society	9 Conference Proceedings Structure and morphology characters of GaN grown by ECR-MBE using hydrogen-nitrogen mixed gas plasma Araki, T., Chiba, Y., Nanishi, Y. MRS-Materials Research Society
4 Conference Proceedings GROWTH OF GaN, AIN AND InN BY ELECTRON CYCLOTRON RESONANCE-METAL ORGANIC MOLECULAR BEAM EPITAXY Wisk, P.W., Abernathy, C.R., Pearton, S.J., Ren, F., Lothian, J.R., Katz, A., Jones, K. Materials Research Society	10 Conference Proceedings Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy M. Misra, T.D. Moustakas, R.P. Vaudo, R. Singh, K.S. Shah Society of Photo-optical Instrumentation Engineers
5 Conference Proceedings Deposition of TiN by electron cyclotron resonance-metal organic molecular beam epitaxy Wisk, P. W., Abernathy, C. R., Pearton, S. J., Ren, F., Katz, A., Bohling, D. A. MRS - Materials Research Society	11 Conference Proceedings THE GROWTH OF GaAS ON Si BY MOLECULAR BEAM EPITAXY Koch, S.M., Rosner, S.J., Schlom, Darrell, Harris, J. Jr. S. Materials Research Society
6 Conference Proceedings Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE Yamaguchi, Tomohiro, Saito, Yoshiki, Kano, Kenji, Muramatsu, Tomo, Araki, Tsutomu, Nanishi, Yasushi, Teraguchi, Nobuaki, … Materials Research Society	12 Conference Proceedings Electrical Properties of InN Grown by RF-MBE Saito, Yoshiki, Teraguchi, Nobuaki, Suzuki, Akira, Yamaguchi, Tomohiro, Araki, Tsutomu, Nanishi, Yasushi Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12