DEFECTS AND STRAIN IN GeXSi1-X/Si LAYERS GROWN BY RAPID THERMAL PROCESSING CHEMCIAL VAPOR DEPOSITION

DEFECTS AND STRAIN IN GeXSi1-X/Si LAYERS GROWN BY RAPID THERMAL PROCESSING CHEMCIAL VAPOR DEPOSITION

Author(s):

Publication title:

Chemistry and defects in semiconductor heterostructures

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

148

Pub. Year:

1989

Page(from):

335

Page(to):

340

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990210 [1558990216]

Language:

English

Call no.:

M23500/148

Type:

Conference Proceedings

Details

TDL ID:	ZA00015633
Series ID:	PA00000011
Conf. info. (Name):	Symposium on Chemistry and Defects in Semiconductor Heterostructures ; MRS Spring Meeting
Conf. info. (Number):	1989
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1989.04.24-1989.04.27

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