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EXPERIMENTAL AND THEORETICAL ANALYSIS OF STRAIN RELAXATION IN GeXSi1-X/Si(100) HETEROEPITAXY

Author(s):
Publication title:
Chemistry and defects in semiconductor heterostructures
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
148
Pub. Year:
1989
Page(from):
309
Page(to):
316
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990210 [1558990216]
Language:
English
Call no.:
M23500/148
Type:
Conference Proceedings

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