ENCHANCED INTERDIFFUSION OF GaAs-A1GaAs INTERFACES FOLLOWING ION INPLANTATION AND RAPID THERMAL ANNEALING

ENCHANCED INTERDIFFUSION OF GaAs-A1GaAs INTERFACES FOLLOWING ION INPLANTATION AND RAPID THERMAL ANNEALING

Author(s):

Publication title:

Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

147

Pub. Year:

1989

Page(from):

291

Page(to):

296

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990203 [1558990208]

Language:

English

Call no.:

M23500/147

Type:

Conference Proceedings

Details

TDL ID:	ZA00015632
Series ID:	PA00000011
Conf. info. (Name):	Symposium on ion beam processing of advanced electronic materials
Conf. info. (Number):	1989
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1989.04.25-1989.04.27

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