McV IMPLANTATION OF GALLIUM ARSENIDE
- Author(s):
- Publication title:
- Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 147
- Pub. Year:
- 1989
- Page(from):
- 185
- Page(to):
- 190
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990203 [1558990208]
- Language:
- English
- Call no.:
- M23500/147
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Modeling the Diffusion Behavior of Implanted Beryllium in Gallium Arsenide Using Suprem - IV
Electrochemical Society |
North Holland |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
9
Conference Proceedings
HIGH RESOLUTION TRIPLE AXIS DIFFRACTOMETRY IN INDIUM-CARBON AND GALLIUM-CARBON CO-IMPLANTED GALLIUM ARSENIDE
MRS - Materials Research Society |
4
Conference Proceedings
Effect of Ion Enery and Dose on the Diffusion of Silicon Implanted into Gallium Arsenide
Electrochemical Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
6
Conference Proceedings
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY OF PROTON IMPLANTED GALLIUM ARSENIDE
Materials Research Society |
12
Conference Proceedings
Simulation of Under- and Supersaturation of Gallium Vacancies in Gallium Arsenide During Silicon In- and Outdiffusion
MRS - Materials Research Society |