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AMORPHIZATION AND ANNEALING OF 6H SiC IMPLANTED WITH N-TYPE, P-TYPE OR ISOVALENT DOPANTS

Author(s):
Publication title:
Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
147
Pub. date:
1989
Page(from):
113
Page(to):
118
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990203 [1558990208]
Language:
English
Call no.:
M23500/147
Type:
Conference Proceedings

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