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REMOVAL OF END-OF-RANGE ION IMPLANTATION DEFECTS IN SILICON BY NEAR NOBLE AND REFRACTORY SILICDE FORMATION

Author(s):
Publication title:
Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
147
Pub. Year:
1989
Page(from):
33
Page(to):
38
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990203 [1558990208]
Language:
English
Call no.:
M23500/147
Type:
Conference Proceedings

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