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EPITAXIAL GROWTH OF NiSi2 AND GoSi2 ON LATERALLY CONFINED SILICON BY RAPID THERMAL ANNEALING

Author(s):
Publication title:
Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
146
Pub. Year:
1989
Page(from):
223
Page(to):
228
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990197 [1558990194]
Language:
English
Call no.:
M23500/146
Type:
Conference Proceedings

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