FORMATION OF RADIATIVE BINDING STATES FOR THE PAIRS BETWEEN ACCEPTORS IN HEAVILY ACCEPTOR-DOPED GaAs

FORMATION OF RADIATIVE BINDING STATES FOR THE PAIRS BETWEEN ACCEPTORS IN HEAVILY ACCEPTOR-DOPED GaAs

Author(s):

Ohnishi, Nobukazu

Publication title:

III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

145

Pub. Year:

1989

Page(from):

493

Page(to):

498

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990180 [1558990186]

Language:

English

Call no.:

M23500/145

Type:

Conference Proceedings

Details

TDL ID:	ZA00015630
Series ID:	PA00000011
Conf. info. (Name):	III-V Heterostructures for Electronic/Photonic Devices : Symposium
Conf. info. (Number):	1989
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1989.04.24-1989.04.27

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