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*MODULATION DOPED GaAs WITH ELECTRON MOBILITIES EXCEEDING 107 cm2/V SEC

Author(s):
Publication title:
III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
145
Pub. Year:
1989
Page(from):
3
Page(to):
12
Pages:
10
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990180 [1558990186]
Language:
English
Call no.:
M23500/145
Type:
Conference Proceedings

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