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A RECESSED-GATE In0.52A10.48As/ +-In0.53gA0.47 AS MISFET

Author(s):
Publication title:
Advances in materials, processing, and devices in III-V compound semiconductors
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
144
Pub. date:
1989
Page(from):
659
Page(to):
664
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990173 [1558990178]
Language:
English
Call no.:
M23500/144
Type:
Conference Proceedings

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