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ELECTRICAL ACTIVATION BEHAIOR OF ION IMPLANTED SILICON IN GALLIUM ARSENIDE DURING RAPID THERMAL ANNEALING

Author(s):
Publication title:
Advances in materials, processing, and devices in III-V compound semiconductors
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
144
Pub. Year:
1989
Page(from):
495
Page(to):
500
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990173 [1558990178]
Language:
English
Call no.:
M23500/144
Type:
Conference Proceedings

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