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MATERIAL AND DEVICE PROPERTIES ON 3" DIAMETER GaAs-ON-Si WITH BURIED P--TYPE LAYERS

Author(s):
Pearton, S. J.
Lee, K. M.
Haegel, N. M.
Huang, c.-J.
Nakahara, S.
Ren. F.
Scarpelli, V.
Short, K. T.
Vernon, S. M.
4 more
Publication title:
Advances in materials, processing, and devices in III-V compound semiconductors
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
144
Pub. date:
1989
Page(from):
317
Page(to):
322
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990173 [1558990178]
Language:
English
Call no.:
M23500/144
Type:
Conference Proceedings

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