Blank Cover Image

THE EFFECT OF SUBSTRATE ORIENTATION ON THE PROPERTIES OF (Ga,A1) As GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY

Author(s):
Publication title:
Advances in materials, processing, and devices in III-V compound semiconductors
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
144
Pub. Year:
1989
Page(from):
215
Page(to):
220
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990173 [1558990178]
Language:
English
Call no.:
M23500/144
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings GaInNAs/GaAs Multiple Quantum Wells at 1.3 μm Wavelength Grown by Gas-Source Molecular Beam Epitaxy

Xin, H.P., Tu, C.W.

Electrochemical Society
7 Conference Proceedings High-quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., Peralta, L. Grave de, Seryogin, G. A., Holtz, M., …

MRS-Materials Research Society
2 Conference Proceedings GAS SOURCE SILICON MOLECULAR BEAM EPITAXY

Hirayama, H., Hiroi, M., Koyama, K., Tatsumi, T., Sato, M.

Materials Research Society
8 Conference Proceedings InGaAs/A1AsSb HETEROSTRUCTURES LATTICE-MATCHED TO InP GROWN BY MOLECULAR BEAM EPITAXY

Nakat, Y., Sugiyama, Y., Inata, T., Ueda, O., Sasa, S., Muto, S., Fujii, T.

Materials Research Society
3 Conference Proceedings Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on GaN by Plasma Assisted Gas Source Molecular Beam Epitaxy

Onstine, A.H., Gila, B.P., Kim, J., Stodilka, D., Allums, K., Abernathy, C.R., Ren, F., Pearton, S.J.

Materials Research Society
9 Conference Proceedings In-Situ RHEED Analysis During (1-SiC Homoepitaxy on (0001)Si- and (0001)C-Faces by Gas Source Molecular Beam Epitaxy

Hatayama, T., Fuyuki, T., Nakamura, S., Kurobe, K., Kimoto, T., Matsunami, H.

Trans Tech Publications
4 Conference Proceedings Growth of SiC on 6H-SiC {0114} Substrates by Gas Source Molecular Beam Epitaxy

Nakamura, S., Hatayama, T., Kimoto, T., Fuyuki, T., Matsunami, H.

Trans Tech Publications
10 Conference Proceedings Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

Pavesi,L., Piazza,F., Harrison,I., Henini,M.

Trans Tech Publications
5 Conference Proceedings Gas-Source Molecular Beam Epitaxy of Electronic Devices

Beam, E. A., III, Brar, B., Broekaert, T. P. E., Chau, H. F., Liu, W., Seabaugh, A. C.

MRS - Materials Research Society
11 Conference Proceedings Deep-ultraviolet photodetectors grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates [6398-34]

Holtz, M., Kuyatkov, V., Song, D. Y., Borisov, B., Nikishin, S., Usikov, A., Dmitriev, V., Kudryavtsev, Y., Asamoza, R.

SPIE - The International Society of Optical Engineering
6 Conference Proceedings Enhanced luminescence from AlxGa1-xN/AlyGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, B. A. Borisov, G. A. Garrett, W. L. Sarney, A. V. Sampath, H. Shen, M. Wraback, M. Holtz

SPIE - The International Society of Optical Engineering
12 Conference Proceedings CHARACTERIZATION OF InGaAs/InP EPITAXIAL LAYERS GROWN OVER V-GROOVE PATTERNED InP SUBSTRATES USING GAS SOURCE MOLECULAR BEAM EPITAXY

Bulitka, N. J., Gupta, A., Robinson, B. J., Thompson, D. A., Weatherly, G. C., Simmons, J. G.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12