ON THE ORIGIN OF THE NEW ELECTRON TRAPS INDUCED BY RAPID THERMAL ANNEALING IN GaAs USING CAPPING PROXIMITY TECHNIQUE

ON THE ORIGIN OF THE NEW ELECTRON TRAPS INDUCED BY RAPID THERMAL ANNEALING IN GaAs USING CAPPING PROXIMITY TECHNIQUE

Author(s):

Publication title:

Advances in materials, processing, and devices in III-V compound semiconductors

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

144

Pub. Year:

1989

Page(from):

27

Page(to):

32

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990173 [1558990178]

Language:

English

Call no.:

M23500/144

Type:

Conference Proceedings

Details

TDL ID:	ZA00015629
Series ID:	PA00000011
Conf. info. (Name):	Advances in Materials, Processing, and Devices in III-V Compound Semiconductors : Symposium
Conf. info. (Number):	1988
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1988.11.28-1998.12.02

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