INFLUENCE OF THE SURFACE DEPLETION LAYER ON THE PHOTO-ETCHING RATE AT GROWTH STRIATIONS IN LEC GaAs

INFLUENCE OF THE SURFACE DEPLETION LAYER ON THE PHOTO-ETCHING RATE AT GROWTH STRIATIONS IN LEC GaAs

Author(s):

Publication title:

Characterization of the structure and chemistry of defects in materials : symposium held November 28-December 3, 1988, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

138

Pub. Year:

1989

Page(from):

527

Page(to):

532

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990111 [1558990119]

Language:

English

Call no.:

M23500/138

Type:

Conference Proceedings

Details

TDL ID:	ZA00015623
Series ID:	PA00000011
Conf. info. (Name):	Symposium on characterization of the structure and chemistry of defects in materials
Conf. info. (Number):	1988
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1988.11.28-1988.12.03

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