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TEMPERATURE DEPENDENCE OF ETCH RATE AND RESIDUAL DAMAGE IN REACTIVELY ION ETCHED GaAs AND A1GaAs

Author(s):
Pearton, S.J.
Jones, K.S.
Chakabarti, U.K.
Emerson, B.
Lane, E.
Vasile, M.J.
Fullowan, T.R.
Hobson, W.S.
Short, K.T.
Haegel, N.M.
5 more
Publication title:
Laser and particle-beam chemical processes on surfaces : symposium held November 29-December 2, 1988, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
129
Pub. date:
1989
Page(from):
489
Page(to):
494
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990029 [155899002X]
Language:
English
Call no.:
M23500/129
Type:
Conference Proceedings

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