ION BEAM INDUCED INTERMIXING OF WSi0.45 oN GaAS
- Author(s):
- Publication title:
- Processing and characterization of materials using ion beams : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 128
- Pub. Year:
- 1989
- Page(from):
- 249
- Page(to):
- 254
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990012 [1558990011]
- Language:
- English
- Call no.:
- M23500/128
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
ACTIVATION AND INTERDIFFUSION CHARACTERISTICS IN IMPLANTED GaAs-A1GaAs HETEROSTRUCTURES ON Si
Materials Research Society |
Electrochemical Society |
2
Conference Proceedings
TEMPERATURE DEPENDENCE OF ETCH RATE AND RESIDUAL DAMAGE IN REACTIVELY ION ETCHED GaAs AND A1GaAs
Materials Research Society |
Electrochemical Society |
3
Conference Proceedings
LATTICE-MATCHED GaAs/Ca0.45Sr0.55F2.Ge(100) HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY
Materials Research Society |
Materials Research Society |
Materials Research Society |
10
Conference Proceedings
Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs
Materials Research Society |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Materials Research Society |