EFFECT OF SUBSTRATE MISORIENTATION ON THE STRUCTURAL STRAIN AND DEFECT DISTRIBUTION OF MOCVD GROWN GaAs ON SI

EFFECT OF SUBSTRATE MISORIENTATION ON THE STRUCTURAL STRAIN AND DEFECT DISTRIBUTION OF MOCVD GROWN GaAs ON SI

Author(s):

Hsieh, K.C.

Publication title:

Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

116

Pub. Year:

1988

Page(from):

261

Page(to):

266

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837869 [0931837863]

Language:

English

Call no.:

M23500/116

Type:

Conference Proceedings

Details

TDL ID:	ZA00015601
Series ID:	PA00000011
Conf. info. (Name):	Symposium on heteroepitaxy on silicon
Conf. info. (Number):	1988
Conf. info. (Venue):	Reno, NV, USA
Conf. info. (Date):	1988.04.05-1988.04.08

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