CAPACITANCE TRANSIENT ANALYSIS OF MBE GROWN GaAs ON SILICON SUBSTRATES

CAPACITANCE TRANSIENT ANALYSIS OF MBE GROWN GaAs ON SILICON SUBSTRATES

Author(s):

Publication title:

Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

116

Pub. Year:

1988

Page(from):

213

Page(to):

218

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837869 [0931837863]

Language:

English

Call no.:

M23500/116

Type:

Conference Proceedings

Details

TDL ID:	ZA00015601
Series ID:	PA00000011
Conf. info. (Name):	Symposium on heteroepitaxy on silicon
Conf. info. (Number):	1988
Conf. info. (Venue):	Reno, NV, USA
Conf. info. (Date):	1988.04.05-1988.04.08

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