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MBE GROWTH OF GaAs ON AN EXACTLY (001)-ORIENTED Si SUBSTRATE AND SELECTIVE EPITAXIAL GROWTH FOR FABRICATION OF MODULATION-DOPED FET'S

Author(s):
Publication title:
Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
116
Pub. Year:
1988
Page(from):
199
Page(to):
204
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837869 [0931837863]
Language:
English
Call no.:
M23500/116
Type:
Conference Proceedings

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