TEM OBSERVATIONS OF SILICON-ON-INSULATOR STRUCTURES FORMED BY NITROGEN IMPLANTATION WITH ANNEALING AT 1405°C

TEM OBSERVATIONS OF SILICON-ON-INSULATOR STRUCTURES FORMED BY NITROGEN IMPLANTATION WITH ANNEALING AT 1405°C

Author(s):

Publication title:

Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

107

Pub. Year:

1988

Page(from):

467

Page(to):

472

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837753 [0931837758]

Language:

English

Call no.:

M23500/107

Type:

Conference Proceedings

Details

TDL ID:	ZA00015593
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon-on-insulator and buried metals in semiconductors
Conf. info. (Number):	1987
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1987.11.30-1987.12.03

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