*HIGH TEMPERATURE ANNEALING OF SIMOX LAYERS: PHYSICAL MECHANISMS OF OXYGEN SEGREGATION
- Author(s):
- Publication title:
- Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 107
- Pub. Year:
- 1988
- Page(from):
- 17
- Page(to):
- 28
- Pages:
- 12
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837753 [0931837758]
- Language:
- English
- Call no.:
- M23500/107
- Type:
- Conference Proceedings
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