FABRICATION AND PROPERTIES OF SINGLE, DOUBLE, AND TRIPLE GATE POLYCRYSTALLINE-SILICON THIN FILM TRANSISTORS

FABRICATION AND PROPERTIES OF SINGLE, DOUBLE, AND TRIPLE GATE POLYCRYSTALLINE-SILICON THIN FILM TRANSISTORS

Author(s):

Publication title:

Polysilicon films and interfaces : symposium held December 1-3, 1987, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

106

Pub. Year:

1988

Page(from):

317

Page(to):

322

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837746 [093183774X]

Language:

English

Call no.:

M23500/106

Type:

Conference Proceedings

Details

TDL ID:	ZA00015592
Series ID:	PA00000011
Conf. info. (Name):	Symposium on polysilicon films and interfaces
Conf. info. (Number):	1987
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1987.12.01-1987.12.03

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