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ELECTRICAL CHARACTERISTICS OF TiSi2/n+-POLYSILICON/ Si02/Si MOS CAPACITORS STRESSED UNDER HIGH TEMPERATURE SILICIDE PROCESSING CONDITIONS

Author(s):
Publication title:
SiO[2] and its interfaces : symposium held November 30-December 5, 1987, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
105
Pub. Year:
1988
Page(from):
295
Page(to):
300
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837739 [0931837731]
Language:
English
Call no.:
M23500/105
Type:
Conference Proceedings

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