DEFECT AND DOPANT CONTROL DURING SILICON EPITAXY USING B AND Ge
- Author(s):
Kola, R. R. Posthill, J. B. Salih, A. S. M. Rozgonyi, G. A. Bean, K. E. Lindberg, K. - Publication title:
- Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 104
- Pub. Year:
- 1988
- Page(from):
- 641
- Page(to):
- 644
- Pages:
- 4
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837722 [0931837723]
- Language:
- English
- Call no.:
- M23500/104
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
MRS - Materials Research Society |
Kluwer Academic Publishers |
MRS - Materials Research Society |
3
Conference Proceedings
INVESTIGATION OF METAL INDUCED SURFACE DEFECTS IN CZOCHRALSKI Si FOLLOWING RAPID THERMAL PROCESSING BY THERMAL WAVE MODULATED REFLECTANCE METHOD
Materials Research Society |
Materials Research Society |
4
Conference Proceedings
300°C PROCESSING OF Si USING REMOTE PLASMA TECHNIQUES FOR IN SITU CLEANING, EPITAXY, AND OXIDE/NITRIDE/OXIDE DEPOSITIONS
Materials Research Society |
10
Conference Proceedings
GaAs HETEROEPITAXY ON SUBSTRATE-ENGINEERED SILICON USING SiXGe1-X MULTILAYER STRUCTURE
Materials Research Society |
Electrochemical Society |
11
Conference Proceedings
CONTROL OF MICROSTRUCTURE AND STRESS IN SPUTTERED TUNGSTEN THIN FILMS ON SILICON
Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |