DEFECT AND DOPANT CONTROL DURING SILICON EPITAXY USING B AND Ge

DEFECT AND DOPANT CONTROL DURING SILICON EPITAXY USING B AND Ge

Author(s):

Kola, R. R.

Publication title:

Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

104

Pub. date:

1988

Page(from):

641

Page(to):

644

Pages:

4

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837722 [0931837723]

Language:

English

Call no.:

M23500/104

Type:

Conference Proceedings

Details

TDL ID:	ZA00015590
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects in electronic materials
Conf. info. (Number):	1987
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1987.11.30-1987.12.03

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