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ABSOLUTE PRESSURE DERIVATIVES OF DEEP LEVEL DEFECTS IN III-V SEMICONDUCTORS

Author(s):
Publication title:
Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
104
Pub. Year:
1988
Page(from):
423
Page(to):
428
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837722 [0931837723]
Language:
English
Call no.:
M23500/104
Type:
Conference Proceedings

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