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LOCALIZATION OF HYDROGEN IN B AND In DOPED SILICON BY ION CHANNELING AND PAC

Author(s):
Wichert, Th.
Skudlik, H.
Carstanjen, H. -D.
Enders, T.
Deicher, M.
Grubel, G.
Keller, R.
Song, L.
Stutzmann, M.
4 more
Publication title:
Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
104
Pub. Year:
1988
Page(from):
265
Page(to):
270
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837722 [0931837723]
Language:
English
Call no.:
M23500/104
Type:
Conference Proceedings

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