HYDROGEN NEUTRALIZATION OF CHALCOGEN DOUBLE DONOR CENTERS IN SINGLE-CRYSTAL SILICON
- Author(s):
- Publication title:
- Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 104
- Pub. Year:
- 1988
- Page(from):
- 241
- Page(to):
- 246
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837722 [0931837723]
- Language:
- English
- Call no.:
- M23500/104
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
HYDROGEN PASSIVATION AND REACTIVATION OFDX CENTERS IN Se-DOPED AND Si-DOPED A1GaAs --A COMPARISON
Materials Research Society |
2
Conference Proceedings
Dissociation kinetics of hydrogen-neutralized Si donors and DX centers in AlGaAs
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
HYDROGEN NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON
Materials Research Society |
9
Conference Proceedings
DLTS-STUDIES ON THE "NEW OXYGEN DONOR"IN HEAT TREATED AND HYDROGENERATED Cz-GROWN Si
Materials Research Society |
4
Conference Proceedings
DONOR REACTIVATION KINETICS AND HYDROGEN REDISTRIBUTION IN THE SPACE CHARGE LAYER OF N-TYPE SILICON
Materials Research Society |
Materials Research Society |
North-Holland |
11
Conference Proceedings
The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |