TRANSMISSION ELECTRON MICROSCOPE STUDY OF AN ORDERED STRUCTURE IN GaAs0.5Sb0.5 GROWN BY MOLECULAR BEAM EPITAXY

TRANSMISSION ELECTRON MICROSCOPE STUDY OF AN ORDERED STRUCTURE IN GaAs0.5Sb0.5 GROWN BY MOLECULAR BEAM EPITAXY

Author(s):

Publication title:

Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

102

Pub. Year:

1988

Page(from):

589

Page(to):

594

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837708 [0931837707]

Language:

English

Call no.:

M23500/102

Type:

Conference Proceedings

Details

TDL ID:	ZA00015588
Series ID:	PA00000011
Conf. info. (Name):	Symposium on epitaxy of semiconductor layered structures
Conf. info. (Number):	1987
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1987.11.30-1987.12.04

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