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IN-SITU SURFACE CLEANING OF Ge(111) AND Si(100) FOR EPITAXIAL GROWTH OF Ge AT 300°C USING REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Author(s):
Publication title:
Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
102
Pub. Year:
1988
Page(from):
319
Page(to):
322
Pages:
4
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837708 [0931837707]
Language:
English
Call no.:
M23500/102
Type:
Conference Proceedings

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