CHARACTERIZATION OF Si MBE LAYERS DOPED IN SITU BY As ION BEAMS

CHARACTERIZATION OF Si MBE LAYERS DOPED IN SITU BY As ION BEAMS

Author(s):

Publication title:

Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

102

Pub. Year:

1988

Page(from):

249

Page(to):

252

Pages:

4

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837708 [0931837707]

Language:

English

Call no.:

M23500/102

Type:

Conference Proceedings

Details

TDL ID:	ZA00015588
Series ID:	PA00000011
Conf. info. (Name):	Symposium on epitaxy of semiconductor layered structures
Conf. info. (Number):	1987
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1987.11.30-1987.12.04

Similar Items:

1 Conference Proceedings CHARACTERIZATION OF GaAs AND Ge FILMS ON (100) SILICON Baribeau, J. _M., Houghton, D. C., Maigne, P., Moore, W. T., Devine, R. L. S., Denhoff, M. W., Stoner, R. J., McCaffrey, … Materials Research Society	7 Conference Proceedings Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC Layers Serre, C., Panknin, D., Perez-Rodriguez, A., Romano-Rodriguez, A., Morante, J.R., Koegler, R., Skorupa, W., Esteve, J., … Trans Tech Publications
2 Conference Proceedings RBS/CHANNELING AND TEN ANALYSIS OF THIN SANDWICHED EPI-LAYERS OF GERMANIUM ON SILICON Swanson, M.L., Parikh, N.P., Frey, E.C., Sandhu, G.S., Chu, W.K., Baribeau, J.-M., Song, Kechang, McCaffrey, J., … Materials Research Society	8 Conference Proceedings DEPTH OSCILLATIONS OF PLANAR CHANNELING YIELD IN InP AND GaP FOR LATTICE LOCATION APPLICATIONS Swanson, M. L., Parikh, N. R., Sandhu, G. S., Frey, E. C., Zhang, Z. H., Chu, W. K. Materials Research Society
3 Conference Proceedings Ge AND GeSi HETEROEPITAXY ON Si(100) BY MBE Houghton, D.C., Bariebeau, J.-M., Maigne, P., Jackman, T.E., Bassignana, I.C., Tan, C.C., Holt., R. Materials Research Society	9 Conference Proceedings THE EFFECT OF Ge SEGREGATION ON OXIDATION OF Si Frey, F. C., Parikh, N. R., Swanson, M. L., Chu, W. K. Materials Research Society
4 Conference Proceedings ELECTRICAL AND OPTICAL PROPERTIES OF ERBIUM IN MBE SILICON AND Si/Ge ALLOYS Efeoglu, H., Evans, J.H., Langer, J.M., Peaker, A.R., Rowell, N.L., Noel, J.-P., Perovic, D.D., Jackman, T.E., Houghton, … Materials Research Society	10 Conference Proceedings X-RAY DIFFRACTION AND SIMS STUDIES OF MBE GROWN DOPING SUPERLATTICES IN SILICON Brown, G. T., Barnett, S. J., Blackmore, G. W., Courtney, S. J., Houghton, D. C. Materials Research Society
5 Conference Proceedings REGROWTH OF DAMAGED LAYERS IN DIAMOND PRODUCED BY ION IMPLANTATION Sandhu, G.S., Liu, B., Parikh, N.R., Hunn, J.D., Swanson, M.L., Wichert, Th., Deicher, M., Skudlik, H., Lennard, W.N., … Materials Research Society	11 Conference Proceedings Doping of GaN by Ion Implantation: Does it Work? Suvkhanov, A., Hunn, J., Wu, W., Thomson, D., Price, K., Parikh, N., Irene, E., Davis, R. F., Krasnobaev, L. MRS - Materials Research Society
6 Conference Proceedings ION BEAM ANALYSIS OF O, N, AND B COMPOSITIONS IN MATERIALS USING NON-RUTHERFORD SCATTERING OF PROTONS Parikh, N.R., Zhang, Z.H., Swanson, M.L., Yu, N., Chu, W.K. Materials Research Society	12 Conference Proceedings DOPANT SITE LOCATION IN DUAL-IMPLANTED GaP USING {111} PLANAR CHANNELING Parikh, N.R., Kao, C.T., Lee, D.R., Muse, J., Swanson, M.L., Haynes, T.E., Venkatasubramanian, R., Timmons, M. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12