DCD AND LOW T PL DETERMINATION OF BANDGAP DEPENDENCE ON COMPOSITION FOR MOCVD InGaAs/InP

DCD AND LOW T PL DETERMINATION OF BANDGAP DEPENDENCE ON COMPOSITION FOR MOCVD InGaAs/InP

Author(s):

Publication title:

Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

102

Pub. Year:

1988

Page(from):

197

Page(to):

200

Pages:

4

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837708 [0931837707]

Language:

English

Call no.:

M23500/102

Type:

Conference Proceedings

Details

TDL ID:	ZA00015588
Series ID:	PA00000011
Conf. info. (Name):	Symposium on epitaxy of semiconductor layered structures
Conf. info. (Number):	1987
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1987.11.30-1987.12.04

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